PART |
Description |
Maker |
M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM From old datasheet system
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V |
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位(131072字由16位)的CMOS静态RAM From old datasheet system
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http:// Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system 262144-BIT CMOS STATIC RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) 3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
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Integrated Device Techn... IDT[Integrated Device Technology]
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M5M5256CP-55LL M5M5256CP-55XL M5M5256CP-70LL M5M52 |
262144-bit (32768 x 8-bit) CMOS static RAM, 55ns 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 70ns
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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UPD4464 UPD4464C-12 UPD4464C-12L UPD4464C-15 UPD44 |
8192 x 8 Bit Static CMOS RAM 8,192 X 8 - BIT STATIC CMOS RAM
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NEC
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IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
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ICSI[Integrated Circuit Solution Inc]
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IDT71016 IDT71016S12PHG IDT71016S12PHGI IDT71016S1 |
CMOS Static RAM 1 Meg (64K x 16-Bit) 64K x 16 Static RAM Filter Module w/out Resistor Network 64K X 16 STANDARD SRAM, 20 ns, PDSO44 CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 12 ns, PDSO44 Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 64K X 16 STANDARD SRAM, 15 ns, PDSO44
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Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc. SRAM INTEGRATED DEVICE TECHNOLOGY INC
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